Semiconductor substrate and test pattern for the same

ABSTRACT

A test pattern used for testing an electrical characteristic of a semiconductor substrate, includes: a first conductive pattern formed on a lower surface of the semiconductor substrate; a second conductive pattern formed on an upper surface of the semiconductor substrate; first and second electrodes formed on the second conductive pattern, the electrodes being connected to test probes; and a first test via-hole formed through the semiconductor substrate to connect the first and second conductive pattern electrically to each other.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the priority of Application No. 2002-150534,filed May 24, 2002 in Japan, the subject matter of which is incorporatedherein by reference.

TECHNICAL FIELD OF THE INVENTION

This invention relates to a test pattern formed on a semiconductorsubstrate.

BACKGROUND OF THE INVENTION

FIG. 1A is a plane view showing a conventional test pattern used formeasuring a contact resistance of a via-hole formed in a semiconductorsubstrate. FIG. 1B is a cross-sectional view taken on line X-X in FIG.1A.

The conventional test pattern (conductive pattern or wiring patter) isused for measuring a contact resistance of a conductive material 5formed inside a via hole 4, formed in a semiconductor substrate 1. Thesemiconductor substrate 1 includes an upper surface 2 and a lower (orbottom) surface 3. The via hole 4 is formed to pass through thesemiconductor substrate 1.

The test pattern includes an upper wiring pattern 40 formed on the uppersurface 2 of the semiconductor substrate 1 and a lower (or bottom)wiring pattern 50 formed on the lower surface 3 of the semiconductorsubstrate 1.

The upper wiring pattern 40 includes a pad (electrode) 41 to be incontact with a current supply probe, a pad 42 to be in contact with avoltage supply probe, and a contact pattern 43 to electrically connectthe pads 41 and 42 to the conductive material 5. The pads 41 and 42 andcontact pattern 43 is formed in united body on the upper surface 2 ofthe semiconductor substrate 1.

The lower wiring pattern 50 includes a pad (electrode) 51 to be incontact with a current supply probe, a pad 52 to be in contact with avoltage supply probe, and a contact pattern 53 to electrically connectthe pads 51 and 52 to the conductive material 5. The pads 51 and 52 andcontact pattern 53 is formed in united body on the lower surface 3 ofthe semiconductor substrate 1.

FIG. 2 is circuit diagram of the conventional test pattern, shown inFIGS. 1A and 1B.

As shown in FIG. 3, the pads 41 and 51 are in contact with probes P1 andP2, respectively, so that a predetermined amount of electric current Iis supplied from a direct power supply (DC) to the pads 41 and 51. Thecurrent I flows along a path formed by the probe P1, the pad 41, theconductive pattern 43, the conductive material 5, the conductivepattern, the pad 51 and the probe P2 in this order. As a result, avoltage, calculated by multiplying the current I and the contactresistance of the conductive material 5, is applied between the ends ofthe conductive material 5.

On the other hand, the pads 42 and 52 are in contact with probes P3 andP3, respectively. The voltage (potential) V applied between the pads 42and 45 is measured by a voltage meter VM.

The voltage meter VM should have a high sensitivity so that the voltageV can be assumed to be the same as a voltage applied over the ends ofthe conductive material 5. Therefore, the contact resistance R of theconductive material 5 is calculated by the following equation: R=V/I

However, according to the above-described conventional test pattern, thepads 41 and 42 are arranged on the upper surface 2 of the semiconductorsubstrate 1 while the pads 51 and 52 are arranged on the lower surface 3of the semiconductor substrate 1; and therefore, the probes P1 to P4 arerequired to be arranged and in contact to the pads 41, 42, 51 and 52from the both sides of the semiconductor substrate 1. As a result, it isrequired to use a specially-designed device for measuring or testingelectrical characteristics of the semiconductor substrate 1.

OBJECTS OF THE INVENTION

Accordingly, an object of the present invention is to provide a testpattern with which electrical characteristics of a semiconductorsubstrate may be easily measured or tested.

Additional objects, advantages and novel features of the presentinvention will be set forth in part in the description that follows, andin part will become apparent to those skilled in the art uponexamination of the following or may be learned by practice of theinvention. The objects and advantages of the invention may be realizedand attained by means of the instrumentalities and combinationsparticularly pointed out in the appended claims.

SUMMARY OF THE INVENTION

According to an aspect of the present invention, a test pattern used fortesting an electrical characteristic of a semiconductor substrate,includes: a first conductive pattern formed on a lower surface of thesemiconductor substrate; a second conductive pattern formed on an uppersurface of the semiconductor substrate; first and second electrodesformed on the second conductive pattern, the electrodes being connectedto test probes; and a first test via-hole formed through thesemiconductor substrate to connect the first and second conductivepattern electrically to each other.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plane view showing a conventional test pattern used formeasuring a contact resistance of a via-hole formed in a semiconductorsubstrate.

FIG. 1B is a cross-sectional view taken on line X-X in FIG. 1A.

FIG. 2 is circuit diagram of the conventional test pattern, shown inFIGS. 1A and 1B.

FIG. 3A is a plane view showing a test pattern, according to a firstpreferred embodiment of the present invention, used for measuring acontact resistance of a via-hole formed in a semiconductor substrate.

FIG. 3B is a cross-sectional view taken on line A-A in FIG. 3A.

FIG. 4 is circuit diagram of the test pattern according to the firstpreferred embodiment, shown in FIGS. 3A and 3B.

FIG. 5A is a plane view showing a test pattern, according to a secondpreferred embodiment of the present invention, used for measuring aninsulation resistance of a semiconductor substrate.

FIG. 5B is a cross-sectional view of FIG. 5A.

FIG. 6 is a plane view showing a test pattern, according to a thirdpreferred embodiment of the present invention, used for measuring awiring resistance of a semiconductor substrate.

FIG. 7 is a plane view showing a test pattern, according to a fourthpreferred embodiment of the present invention, used for measuring awiring resistance of a semiconductor substrate.

DETAILED DISCLOSURE OF THE INVENTION

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings which form a part hereof,and in which is shown by way of illustration specific preferredembodiments in which the inventions may be practiced. These preferredembodiments are described in sufficient detail to enable those skilledin the art to practice the invention, and it is to be understood thatother preferred embodiments may be utilized and that logical, mechanicaland electrical changes may be made without departing from the spirit andscope of the present inventions. The following detailed description is,therefore, not to be taken in a limiting sense, and scope of the presentinventions is defined only by the appended claims.

FIG. 3A is a plane view showing a test pattern, according to a firstpreferred embodiment of the present invention, used for measuring acontact resistance of a via-hole formed in a semiconductor substrate.FIG. 3B is a cross-sectional view taken on line A-A in FIG. 3A.

The test pattern (conductive pattern or wiring patter) is used formeasuring a contact resistance of a conductive material 5 formed insidea via hole 4, formed in a semiconductor substrate 1. The semiconductorsubstrate 1 includes an upper surface 2 and a lower (or bottom) surface3. The via hole 4 is formed to pass through the semiconductor substrate1.

The test pattern includes an upper wiring pattern 10 formed on the uppersurface 2 of the semiconductor substrate 1 and a lower (or bottom)wiring pattern 30 formed on the lower surface 3 of the semiconductorsubstrate 1.

The upper wiring pattern 10 includes a pad (electrode) 11 to be incontact with a current supply probe, a pad 12 to be in contact with avoltage supply probe, and a contact pattern 13 to electrically connectthe pads 11 and 12 to the conductive material 5. The pads 11 and 12 andcontact pattern 13 is formed in united body on the upper surface 2 ofthe semiconductor substrate 1.

The test pattern further includes other upper patterns 21 and 22, whichare not overlapped with the wiring pattern 10 on the upper surface 2 ofthe semiconductor substrate 1. The upper patterns 21 and 22 areelectrically connected to the lower wiring pattern 30 thought via holes6 and 8, respectively. The upper patterns 21 and 22 are provided thereonwith pads 21P and 22P, which are to be in contact with a current supplyprobe and a voltage-measuring probe, respectively.

The lower wiring pattern 30 is shaped to extend and to connect theconductive material 5 to test via-holes 6 and 8. The test via-holes 6and 8 are provided with conductive inner layers 7 and 9, which areelectrically connected to the pattern 21 and 22 on the upper surface 2,respectively.

FIG. 4 is circuit diagram of the test pattern according to the firstpreferred embodiment, shown in FIGS. 3A and 3B. Now a method formeasuring a contact resistance of the conductive material 5 is describedin connection with FIG. 4.

First, an insulating material INS, for example, paper or quartz isarranged on a test stage STG. Next, the semiconductor substrate 1 isplaced on the insulation material INS so that the upper surface 2 facesup.

Subsequently, current supply probes P1 and P2 are contacted to the pad11 on the upper wiring pattern (upper circuit pattern) 10 and the pad 21on the upper test pattern 21, respectively. A direct current supply DCsupplies a constant current I to the probes P1 and P2. On the otherhand, voltage measuring probes P3 and P4 are contacted to the pads 12and 22, respectively, so that a voltage is measured by a voltage meterVM.

When the constant current I is supplied to the probes P1, the currentflows along the path formed by the pad 11, the connection pattern 13,the conductive material (inside wall) 5, the lower wiring pattern 30,the conductive material (inside wall) 7, the pad 21P and the probe P2,in this order. As a result, a voltage, calculated by multiplying thecurrent I and the contact resistance of the conductive material 5, isapplied between the ends of the conductive material 5.

On the other hand, the pad P3 is applied with a voltage at an upper sideof the conductive material 5 through the connection pattern 13 and thepad 12. The pad P4 is applied with a voltage at a lower side of theconductive material 5 through the lower wiring pattern 30, theconductive material 9 and the pad 22P. The voltage (potential) V appliedbetween the pads 12 and 22 is measured by the voltage meter VM.

The voltage meter VM should have a high sensitivity so that the voltageV can be assumed to be the same as a voltage applied over the ends ofthe conductive material 5. Therefore, the contact resistance R of theconductive material 5 is calculated by the following equation: R=V/I

As described above, according to the first preferred embodiment, all thepads 11, 12, 21P and 22P used for test are formed on the upper surface 2of the semiconductor substrate 1. Therefore, an electricalcharacteristic of the semiconductor substrate 1 can be performed easily.

FIG. 5A is a plane view showing a test pattern, according to a secondpreferred embodiment of the present invention, used for measuring aninsulation resistance of a semiconductor substrate. FIG. 5B is across-sectional view of FIG. 5A.

The test pattern shown in FIGS. 5A and 5B is used for measuring aninsulation resistance of the semiconductor substrate. The patternincludes upper patterns 21 and 22 and lower wiring patterns 31 and 32.The lower wiring patterns 31 and 32 are shaped to be comb-branchedpatterns, which are arranged to be opposed and nested or interlocked butnot to be in contact to each other.

The semiconductor substrate 1 includes a couple of via holes 6 and 8,which are provided with conductive inner materials 7 and 9. The lowerwiring pattern 31 is electrically connected to the upper pattern 21through the conductive material 7 in the via hole 6. A pad 21P is formedon the upper pattern 21 so that a test probe is in contact therewith.

The lower wiring pattern 32 is electrically connected to the upperpattern 22 through the conductive material 9 in the via hole 8. A pad22P is formed on the upper pattern 22 so that a test probe is in contacttherewith.

In a measurement process, first, an insulating material, for example,paper or quartz is arranged on a test stage. Next, the semiconductorsubstrate 1 is placed on the insulation material so that the uppersurface 2 faces up. Subsequently, the probes are contacted to the pads21P and 22P and a resistance between those pads is measured.

As described above, according to the second preferred embodiment, boththe pads 21P and 22P used for test are formed on the upper surface 2 ofthe semiconductor substrate 1. As a result, the upper surface 2, onwhich a micro-designed circuit is formed, is not in contact with a teststage; and therefore, an electrical characteristic of the semiconductorsubstrate 1 can be performed easily. Further, the upper surface 2 of thesemiconductor substrate 1 is prevented from being damaged and havingparticles thereon.

FIG. 6 is a plane view showing a test pattern, according to a thirdpreferred embodiment of the present invention, used for measuring awiring resistance of a semiconductor substrate.

The test pattern shown in FIG. 6 is used for measuring a wiringresistance of the semiconductor substrate. The pattern includes upperpatterns 21 and 22 and a lower wiring pattern 33. The lower wiringpattern 33 is wound or shaped to be zigzag path.

The semiconductor substrate 1 includes a couple of via holes, which areprovided with conductive inner materials, in the same manner as theabove described second preferred embodiment. One end of the wiringpattern 33 is electrically connected to the upper pattern 21 through thevia hole. A pad 21P is formed on the upper pattern 21 so that a testprobe is in contact therewith.

The other end of the wiring pattern 33 is electrically connected to theupper pattern 22 through the via hole. A pad 22P is formed on the upperpattern 22 so that a test probe is in contact therewith.

In a measurement process, first, an insulating material, for example,paper or quartz is arranged on a test stage. Next, the semiconductorsubstrate 1 is placed on the insulation material so that the uppersurface 2 faces up. Subsequently, the probes are contacted to the pads21P and 22P and a resistance between those pads is measured.

As described above, according to the second preferred embodiment, boththe pads 21P and 22P used for test are formed on the upper surface 2 ofthe semiconductor substrate 1. As a result, the upper surface 2, onwhich a micro-designed circuit is formed, is not in contact with a teststage; and therefore, an electrical characteristic of the semiconductorsubstrate 1 can be performed easily. Further, the upper surface 2 of thesemiconductor substrate 1 is prevented from being damaged and havingparticles thereon.

FIG. 7 is a plane view showing a test pattern, according to a fourthpreferred embodiment of the present invention, used for measuring awiring resistance of a semiconductor substrate.

The test pattern shown in FIG. 7 is used for measuring a wiringresistance of the semiconductor substrate. The pattern includes upperpatterns 25, 26, 27 and 28 and a lower wiring pattern (34, 35, 36, 37and 38). The lower wiring pattern 34 is shaped to have a center portion34 extending straight and terminal portions 35, 36, 37 and 38. Theterminal portions 35 and 36 are arranged at one end of the centerportion 34, while the terminal portions 37 and 38 are arranged at theother end of the center portion 34. The center portion 34 and theterminal portions 35-38 are formed in one united body.

The semiconductor substrate 1 includes four via holes, which areprovided with conductive inner materials, in the same manner as theabove described second and third preferred embodiment. The terminalportions 35-38 are electrically connected to the patterns 25-28,respectively, through the via holes. Pads 25P, 26P, 27P and 28P areformed on the upper patterns 25-28, respectively, so that test probesare contacted thereto.

In a measurement process, first, an insulating material, for example,paper or quartz is arranged on a test stage. Next, the semiconductorsubstrate 1 is placed on the insulation material so that the uppersurface 2 faces up. Subsequently, current supply probes are contacted tothe pads 25P and 27P, and voltage measuring probes are contacted to thepads 25P and 28P.

Next, a constant current I is supplied between the pads 25P and 27P, anda voltage V applied between the pads 26P and 28P is measured. Therefore,the wiring resistance R is calculated by the following equation: R=V/I

As described above, according to the second preferred embodiment, allthe pads 25P to 28P used for test are formed on the upper surface 2 ofthe semiconductor substrate 1. As a result, the upper surface 2, onwhich a micro-designed circuit is formed, is not in contact with a teststage; and therefore, an electrical characteristic of the semiconductorsubstrate 1 can be performed easily. Further, the upper surface 2 of thesemiconductor substrate 1 is prevented from being damaged and havingparticles thereon.

Wiring patterns formed on the upper and lower surfaces 2 and 3 of thesemiconductor substrate are not limited by the above describedembodiments.

The invention may be applied to a measurement of any of electriccharacteristics, for example, capacitance and inductance, in addition toinsulation resistance and wiring resistance.

1. A test pattern used for testing an electrical characteristic of asemiconductor substrate, comprising: a first conductive pattern formedon a lower surface of the semiconductor substrate; a second conductivepattern formed on an upper surface of the semiconductor substrate; firstand second electrodes formed on the second conductive pattern, theelectrodes being connected to test probes; and a first test via-holeformed through the semiconductor substrate to connect the first andsecond conductive pattern electrically to each other. 2-3. (canceled) 4.A test pattern according to claim 1, wherein the electric characteristicis an insulation resistance of the semiconductor substrate.
 5. A testpattern according to claim 4, wherein the first conductive patterncomprises first and second comb-branched patterns which are opposed andnested or interlocked but not to be in contact to each other.
 6. A testpattern according to claim 5, wherein the semiconductor substratefurther comprises a second test via-hole, and the second conductivepattern comprises first and second patterns, in which the first patternis connected to the first comb-branched pattern via the first testvia-hole and the second pattern is connected to the second comb-branchedpattern via the second test via-hole.
 7. A test pattern according toclaim 1, wherein the electric characteristic is a wiring resistance ofthe semiconductor substrate.
 8. A test pattern according to claim 7,wherein the first conductive pattern is wound or shaped to be zigzagpath.
 9. A test pattern according to claim 8, wherein the semiconductorsubstrate further comprises a second test via-hole, the secondconductive pattern comprises first and second patterns which areconnected to the first and second electrodes, respectively, and thefirst conductive pattern comprises first and second end which areelectrically connected to the first and second patterns via the firstand second test via-holes, respectively.
 10. A test pattern according toclaim 6, wherein the first conductive pattern is shaped to have a centerportion extending straight.
 11. A test pattern according to claim 8,wherein the semiconductor substrate further comprises second to fourthtest via-holes, the second conductive pattern comprises first to fourthpatterns which are connected to the first to fourth test via-holes,respectively, the semiconductor substrate further comprises third andfourth electrodes so as to arrange the first to fourth electrodes on thefirst to fourth patterns of the second conductive pattern, respectively,and the first conductive pattern comprises first to fourth ends, whichare electrically connected to the first to fourth patterns of the secondconductive pattern via the first to fourth test via-holes, respectively.12. A semiconductor substrate, comprising: a test pattern used fortesting an electrical characteristic of the semiconductor substrate,which comprises: (a) a first conductive pattern formed on a lowersurface of the semiconductor substrate; (b) a second conductive patternformed on an upper surface of the semiconductor substrate; (c) first andsecond electrodes formed on the second conductive pattern, theelectrodes being connected to test probes; and (d) a first test via-holeformed through the semiconductor substrate to connect the first andsecond conductive pattern electrically to each other. 13-14. (canceled)15. A semiconductor substrate according to claim 12, wherein theelectric characteristic is an insulation resistance of the semiconductorsubstrate.
 16. A semiconductor substrate according to claim 15, whereinthe first conductive pattern comprises first and second comb-branchedpatterns which are opposed and nested or interlocked but not to be incontact to each other.
 17. A semiconductor substrate according to claim16, further comprising: a second test via-hole, wherein the secondconductive pattern comprises first and second patterns, in which thefirst pattern is connected to the first comb-branched pattern via thefirst test via-hole and the second pattern is connected to the secondcomb-branched pattern via the second test via-hole.
 18. A semiconductorsubstrate according to claim 12, wherein the electric characteristic isa wiring resistance of the semiconductor substrate.
 19. A semiconductorsubstrate according to claim 18, wherein the first conductive pattern iswound or shaped to be zigzag path.
 20. A semiconductor substrateaccording to claim 19, further comprising: a second test via-hole,wherein the second conductive pattern comprises first and secondpatterns which are connected to the first and second electrodes,respectively, and the first conductive pattern comprises first andsecond end which are electrically connected to the first and secondpatterns via the first and second test via-holes, respectively.
 21. Asemiconductor substrate according to claim 18, wherein the firstconductive pattern is shaped to have a center portion extendingstraight.
 22. A semiconductor substrate according to claim 19, furthercomprising: second to fourth test via-holes; and third and fourthelectrodes, wherein the second conductive pattern comprises first tofourth patterns which are connected to the first to fourth testvia-holes, respectively, and to the first to fourth electrodes,respectively, and the first conductive pattern comprises first to fourthends, which are electrically connected to the first to fourth patternsof the second conductive pattern via the first to fourth test via-holes,respectively.